Martin Heckel
Martin Heckel is a research associate and PhD student at Hof University of Applied Sciences and Graz University of Technology.
He started to perform research related on Rowhammer during his Bachelor Thesis in 2021 and has continued his research in this field afterwards.
Session
The density of memory cells in modern DRAM is so high that disturbance errors, like the Rowhammer effect, have become quite frequent. An attacker can exploit Rowhammer to flip bits in inaccessible memory locations by reading the contents of nearby accessible memory rows. Since its discovery in 2014, we have seen a cat-and-mouse security game with a continuous stream of new attacks and new defenses. Now, in 2024, exactly 10 years after Rowhammer was discovered, it is time to look back and reflect on the progress we have made and give an outlook on the future. Additionally, we will present an open-source framework to check if your system is vulnerable to Rowhammer.